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Toshiba Expands Line-Up of Low Voltage N-channel MOSFET

Toshiba Expands Line-Up of Low Voltage N-channel MOSFET


Toshiba Expands Line-Up of Low Voltage N-channel MOSFET – Jul 10, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation today announced that it has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the “TPN2R203NC”. Fabricated with eighth generation process, […]

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Posted On July 10, 2013
TPN2R203NC

Toshiba Expands Line-Up of Low Voltage N-channel MOSFET – Jul 10, 2013– Tokyo, Japan  (Techreleased) – Toshiba Corporation today announced that it has expanded its line-up of low voltage N-channel MOSFETs, used in protection circuits for lithium ion batteries and the power management switches of mobile equipment, with the “TPN2R203NC”. Fabricated with eighth generation process, TPN2R203NC realizes low ON-resistance, which reduces conduction loss in equipment.

TPN2R203NC

TPN2R203NC

Key Features

  • Eighth generation process realizes low ON-resistance.
  • TSON Advance package with good thermal conductivity.
  • High avalanche resistance.

Main specifications

Part Number Package VDSS (V) RDS(ON) (mΩ)
VGS=10V VGS=4.5V
Typ. Max Typ. Max
TPN2R203NC TSON Advance 30 1.8 2.2 2.8 3.6

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