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Mitsubishi Electric to Ship Samples of New IGBT Module T Series – May 19, 2015– Tokyo, Japan (Techreleased) – Mitsubishi Electric Corporation announced today that it would begin shipping samples of its new T series power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBTs), comprising three different packages and 48 models in total. The new […]
Mitsubishi Electric to Ship Samples of New IGBT Module T Series – May 19, 2015– Tokyo, Japan (Techreleased) – Mitsubishi Electric Corporation announced today that it would begin shipping samples of its new T series power semiconductor modules featuring seventh-generation insulated-gate bipolar transistors (IGBTs), comprising three different packages and 48 models in total. The new modules realize improved power loss and reliability for general-purpose inverters, elevators, uninterruptible power supplies (UPS) and other industrial equipment. Sample shipments will begin June 30.
IGBT Module T Series
The modules will be exhibited at major trade shows including Power Conversion Intelligent Motion (PCIM) Europe 2015 in Nuremberg, Germany from May 19 to 21, MOTORTECH JAPAN 2015 during TECHNO-FRONTIER 2015 in Japan from May 20 to 22, and PCIM Asia 2015 in China from June 24 to 26.
1) Reduced power loss thanks to seventh-generation IGBT and seventh-generation diode
– Seventh-generation CSTBT1TMchip achieves low power loss and low EMI noise.
– Relaxed Field of Cathode (RFC) diode2 chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge.
2) Reliability of de facto standard package are improved by latest package technology
– The internal structure is improved, keeping compatibility with de facto standard package.
– Integration of insulation and copper base in the substrate, along with improved internal electrode construction, helps to increase thermal cycle life3 and lower internal inductance, leading to more reliable equipment performance.
