Mitsubishi Electric To Launch Super-mini Full SiC DIPPFC Module

BY Editor

Mitsubishi Electric to Launch Super-mini Full SiC DIPPFC Module – Jul 16, 2014– Tokyo, Japan (Techreleased) – Mitsubishi Electric Corporation announced today the immediate launch of a transfer-molded super-mini dual in-line package power factor correction (DIPPFC^TM) module incorporating silicon carbide (SiC) transistors and diodes, which is expected to help reduce the power consumption and size of home appliances.

PSF20L91A6-A

Mitsubishi Electric’s new DIPPFC module will be exhibited at MOTORTECH JAPAN 2014 during TECHNO-FRONTIER 2014, which will be held at Tokyo Big Sight in Japan from July 23 to 25.

Product Features

1) SiC contributes to lower power consumption and compact size

• Power loss is reduced by about 45% compared to silicon (Si) products, contributing to improved energy conversion.
• SiC schottky-barrier diode (SBD) reduces recovery current power consumption and electromagnetic interference noise.
• SiC metal oxide semiconductor field effect transistor (MOSFET) achieves maximum 40kHz high-frequency switching and contributes to downsizing of peripheral components, such as reactors and heat sinks.
• Power factor correction (PFC) and driving IC contribute to downsizing by reducing mounting surface area and simplifying wiring.

2) Simplified design for inverter systems

• Adoption of the same package as the dual in-line package intelligent power module (DIPIPM^TM) simplifies the installation of heat sinks.
• Interleave method for PFC decreases the ripple current and simplifies the noise filter circuit.

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