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Toshiba Launches High Voltage MOSFETs “πMOS” series – Jul 22, 2013– Tokyo, Japan (Techreleased) – Toshiba Corporation today announced that it has launched a new series of high voltage MOSFETs, “πMOS” series, and introduced “TK9J90E” as the initial product of the series. Mass production is scheduled to start in August, 2013. Optimization of chip design […]
Toshiba Launches High Voltage MOSFETs “πMOS” series – Jul 22, 2013– Tokyo, Japan (Techreleased) – Toshiba Corporation today announced that it has launched a new series of high voltage MOSFETs, “πMOS” series, and introduced “TK9J90E” as the initial product of the series. Mass production is scheduled to start in August, 2013.
TK9J90E
Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product[1] with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.
| Part Number | Package | Absolute Maximum Ratings | RDS(ON) Max (Ω) | Qg Typ. (nC) |
Ciss Typ. (pF) |
|
|---|---|---|---|---|---|---|
| VDSS (V) | ID (A) | VGS=10V | ||||
| TK9J90E | TO-3P(N) | 900 | 9 | 1.3 | 46 | 2000 |
